ACADEMICS
Course Details
ELE 230 Electronics I
2019-2020 Fall term information
The course is not open this term
Timing data are obtained using weekly schedule program tables. To make sure whether the course is cancelled or time-shifted for a specific week one should consult the supervisor and/or follow the announcements.
Course definition tables are extracted from the ECTS Course Catalog web site of Hacettepe University (http://akts.hacettepe.edu.tr) in real-time and displayed here. Please check the appropriate page on the original site against any technical problems.
ELE230 - ELECTRONICS I
| Course Name | Code | Semester | Theory (hours/week) |
Application (hours/week) |
Credit | ECTS |
|---|---|---|---|---|---|---|
| ELECTRONICS I | ELE230 | 4th Semester | 4 | 0 | 4 | 6 |
| Prerequisite(s) | ELE110 Introduction to Electrical Engineering | |||||
| Course language | English | |||||
| Course type | Must | |||||
| Mode of Delivery | Face-to-Face | |||||
| Learning and teaching strategies | Lecture Question and Answer Problem Solving Other: This course must be taken together with ELE214 ELECTRONICS LABORATORY I. | |||||
| Instructor (s) | Faculty members | |||||
| Course objective | It is aimed to give the following topics to the students; a) Operation and application of the basic electronic elements: diodes and transistors b) DC and AC analysis of BJT and FET amplifiers c) Frequency response of BJT and FET amplifiers d) Design of BJT and FET amplifiers e) Design and analysis of multistage amplifiers | |||||
| Learning outcomes |
| |||||
| Course Content | Diodes and diode applications, Voltage regulators, Bipolar junction transistor (BJT) and its characteristics, DC biasing and bias stability of BJTs, Field effect transistor (FET) and its characteristics, DC biasing of FETs, Small signal transistor modelling, Small signal analysis (SSAC) of BJT amplifiers, Small signal analysis (SSAC) of FET amplifiers, Frequency response of BJT and FET amplifiers, Multistage amplifiers | |||||
| References | 1. A. S. Sedra and K. C. Smith, Microelectronic Circuits, Oxford Uni. Press, 2009 (6th ed.) 2. R. L. Boylestad and L. Nashelsky, Electronic Devices and Circuit Theory, Pearson, 2012, (11th ed.) 3. J. Millman and C. Halkias, Integrated Electronics, McGraw-Hill 4. D. Neamen, Electronic Circuit Analysis and Design, McGraw-Hill | |||||
Course outline weekly
| Weeks | Topics |
|---|---|
| Week 1 | Diodes and diode applications |
| Week 2 | Voltage regulators |
| Week 3 | Bipolar juntion transistor (BJT) and its characteristics |
| Week 4 | DC biasing and bias stability of BJTs |
| Week 5 | Field effect transistor (FET) and its characteristics |
| Week 6 | DC biasing of FETs |
| Week 7 | AC/DC load-line analysis of BJT and FET circuits |
| Week 8 | Small signal analysis (SSAC) of BJT amplifiers |
| Week 9 | Small signal analysis (SSAC) of FET amplifiers |
| Week 10 | Midterm Exam |
| Week 11 | Frequency response of BJT amplifiers |
| Week 12 | Frequency response of FET amplifiers |
| Week 13 | Multistage amplifiers |
| Week 14 | Multistage amplifiers |
| Week 15 | Preparation for Final exam |
| Week 16 | Final Exam |
Assesment methods
| Course activities | Number | Percentage |
|---|---|---|
| Attendance | 0 | 0 |
| Laboratory | 0 | 0 |
| Application | 0 | 0 |
| Field activities | 0 | 0 |
| Specific practical training | 0 | 0 |
| Assignments | 0 | 0 |
| Presentation | 0 | 0 |
| Project | 0 | 0 |
| Seminar | 0 | 0 |
| Midterms | 1 | 50 |
| Final exam | 1 | 50 |
| Total | 100 | |
| Percentage of semester activities contributing grade succes | 1 | 50 |
| Percentage of final exam contributing grade succes | 1 | 50 |
| Total | 100 | |
Workload and ECTS calculation
| Activities | Number | Duration (hour) | Total Work Load |
|---|---|---|---|
| Course Duration (x14) | 14 | 4 | 56 |
| Laboratory | 0 | 0 | 0 |
| Application | 0 | 0 | 0 |
| Specific practical training | 0 | 0 | 0 |
| Field activities | 0 | 0 | 0 |
| Study Hours Out of Class (Preliminary work, reinforcement, ect) | 14 | 4 | 56 |
| Presentation / Seminar Preparation | 0 | 0 | 0 |
| Project | 0 | 0 | 0 |
| Homework assignment | 0 | 0 | 0 |
| Midterms (Study duration) | 1 | 20 | 20 |
| Final Exam (Study duration) | 1 | 30 | 30 |
| Total Workload | 30 | 58 | 162 |
Matrix Of The Course Learning Outcomes Versus Program Outcomes
| D.9. Key Learning Outcomes | Contrubition level* | ||||
|---|---|---|---|---|---|
| 1 | 2 | 3 | 4 | 5 | |
| 1. PO1. Possesses the theoretical and practical knowledge required in Electrical and Electronics Engineering discipline. | X | ||||
| 2. PO2. Utilizes his/her theoretical and practical knowledge in the fields of mathematics, science and electrical and electronics engineering towards finding engineering solutions. | X | ||||
| 3. PO3. Determines and defines a problem in electrical and electronics engineering, then models and solves it by applying the appropriate analytical or numerical methods. | X | ||||
| 4. PO4. Designs a system under realistic constraints using modern methods and tools. | X | ||||
| 5. PO5. Designs and performs an experiment, analyzes and interprets the results. | X | ||||
| 6. PO6. Possesses the necessary qualifications to carry out interdisciplinary work either individually or as a team member. | X | ||||
| 7. PO7. Accesses information, performs literature search, uses databases and other knowledge sources, follows developments in science and technology. | X | ||||
| 8. PO8. Performs project planning and time management, plans his/her career development. | X | ||||
| 9. PO9. Possesses an advanced level of expertise in computer hardware and software, is proficient in using information and communication technologies. | X | ||||
| 10. PO10. Is competent in oral or written communication; has advanced command of English. | X | ||||
| 11. PO11. Has an awareness of his/her professional, ethical and social responsibilities. | X | ||||
| 12. PO12. Has an awareness of the universal impacts and social consequences of engineering solutions and applications; is well-informed about modern-day problems. | X | ||||
| 13. PO13. Is innovative and inquisitive; has a high level of professional self-esteem. | X | ||||
*1 Lowest, 2 Low, 3 Average, 4 High, 5 Highest